Total ionizing dose radiation hardening technology based on double-charge multiple-step ion implantation

This paper describes the total ionizing dose (TID) radiation hardening of buried oxide in separation by implantation of oxygen silicon on insulator (SOI) substrates. In this study, 0.5-μm partially depleted SOI complementary metal–oxide–semiconductor (CMOS) transistors and circuits were prepared usi...

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Bibliographic Details
Published in:Microelectronics and reliability 2023-03, Vol.142, p.114903, Article 114903
Main Authors: Jianwei, Wu, Zongguang, Yu, Genshen, Hong, Zhiqiang, Xiao, Jing, Luo
Format: Article
Language:English
Subjects:
Double-charge ion implantation
Leakage current
Radiation hardening
Threshold voltage drift
TID radiation
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Summary:This paper describes the total ionizing dose (TID) radiation hardening of buried oxide in separation by implantation of oxygen silicon on insulator (SOI) substrates. In this study, 0.5-μm partially depleted SOI complementary metal–oxide–semiconductor (CMOS) transistors and circuits were prepared using double-charge multiple-step ion implantation and annealing, and the changes in the drive current, leakage current, and threshold voltage of the CMOS transistor under different TID radiation conditions were compared. Under a TID of 500 k Rad(Si), radiation-hardened H-type N-channel metal–oxide–semiconductor transistors had a threshold voltage drift of
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2023.114903