NSFET performance optimization through SiGe channel design - A simulation study

In this article, NSFET performances including DC electrical characteristics, analog/RF metrics and NBTI degradation are studied using 3D fully-calibrated TCAD simulation. Through contrastive analysis, it is found that the introduction of SiGe into channel significantly improves the on-state current...

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Bibliographic Details
Published in:Microelectronics and reliability 2023-09, Vol.148, p.115037, Article 115037
Main Authors: Cheng, Shan-Lin, Li, Cong, Dong, Xiao-Yu, Lv, Song-Song, You, Hai-Long
Format: Article
Language:English
Subjects:
Analog/RF
Electrostatics
Nanosheet FET (NSFET)
Negative bias temperature instability (NBTI)
SiliconGermanium (SiGe) channel
Simulation
Technology computer-aided design (TCAD)
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Summary:In this article, NSFET performances including DC electrical characteristics, analog/RF metrics and NBTI degradation are studied using 3D fully-calibrated TCAD simulation. Through contrastive analysis, it is found that the introduction of SiGe into channel significantly improves the on-state current (Ion), lowers SS and Vth, brings an overall improvement to analog/RF metrics and inhibits NBTI degradation, but deteriorates short channel effects (SCEs). To obtain proper thickness and fraction of SiGe, which can provide better optimization for device performances, further simulations were done for SiGe devices including SiGe cladded channel NSFET (Device A) and full SiGe channel NSFET (Device B). Simulation results show that when the thickness of the SiGe layer is 1 nm and the Ge composition in SiGe is 0.2, the performance of the device is optimal for Device A. Compared with the NSFET with silicon channel, the Ion of Device A is increased by 150.2 %, the SS is increased by 9.9 %, the fmax is increased by 20.8 %, and the NBTI degradation is reduced by 28.1 %. For Device B compared with NSFET with silicon channel, when the Ge composition in SiGe is 0.2, the performance is optimized as: 3534.4 % improvement in Ion, 3.2 % in SS, 1095.1 % in fmax, and 26.3 % in NBTI degradation. •Using TCAD to simulate SiGe channel NSFET•Further investigating the advantages of SiGe channel NSFET in DC and AC performance•Further investigating the advantages of SiGe channel NSFET in NBTI degradation•Carrying out more targeted optimization measures for SiGe channel NSFET
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2023.115037