A simple sensor device for power cycle degradation sensing

• Published in: Microelectronics and reliability 2023-08, Vol.147, p.115068, Article 115068
• Main Authors: Tsukamoto, Tatsuta, Nishizawa, Shin-ichi, Saito, Wataru
• Format: Article
• Language: English
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2023.115068

A new sensor device is proposed for detection of power cycle degradation. Proposed sensor device is consisting of a Schottky-barrier MOSFET and the sensing principle is based on change of I-V characteristics by mechanical stress. Samples were fabricated by metal lift-off process and SiO2 gate insulator film deposition and the fundamental operation was evaluated by four-point bending test for mechanical stress applying. The fabricated device showed monotonically drain current change with number of stress cycles and about 5 times current change compared with initial current after 10,000 cycles of 4 N stress. Large current change by cyclic mechanical stress is attractive for a simple detection of power cycle degradation without expensive analog-circuits. •A proposal of new sensor device for detection of power cycle degradation•Consisting of a Schottky-barrier MOSFET and change of I-V characteristics by mechanical stress•Demonstration of fundamental operation by four-point bending test and monotonically drain current change after mechanical stress applying