Modelling SiC MOSFET module threshold voltage (V) and impact of parallel device ΔV on short circuit robustness

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Bibliographic Details
Published in:Microelectronics and reliability 2023-11, Vol.150, p.115101, Article 115101
Main Authors: Deb, A., Gonzalez, J. Ortiz, Jahdi, S., Taha, M., Mawby, P.A., Alatise, O.
Format: Article
Language:English
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ISSN:0026-2714
DOI:10.1016/j.microrel.2023.115101