Bias-dependent degradation of single quantum well on InGaN-based light emitting diode

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Bibliographic Details
Published in:Microelectronics and reliability 2023-11, Vol.150, p.115132, Article 115132
Main Authors: Casu, C., Buffolo, M., Caria, A., Piva, F., De Santi, C., Meneghesso, G., Zanoni, E., Meneghini, M.
Format: Article
Language:English
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ISSN:0026-2714
DOI:10.1016/j.microrel.2023.115132