Transient simulations and theoretical modeling of near-junction heat conduction in GaN-on-diamond HEMT

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Bibliographic Details
Published in:Microelectronics and reliability 2024-01, Vol.152, p.115299, Article 115299
Main Authors: Shen, Yiyang, Fan, Xueliang, Tang, Daosheng
Format: Article
Language:English
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ISSN:0026-2714
DOI:10.1016/j.microrel.2023.115299