Heavy ions and alpha particles irradiation impact on III-V broken-gap gate-all-around TFET

• Published in: Microelectronics and reliability 2024-07, Vol.158, p.115426, Article 115426
• Main Authors: Kumar, Pankaj, Koley, Kalyan, Maurya, Ashish, Kumar, Subindu
• Format: Article
• Language: English
• Subjects: Alpha particles; Bipolar gain; GAA MOSFET; GAA TFET; Heavy ions
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2024.115426

This report deals with the impact of radiation on III-V and Si gate-all-around tunnel field effect transistors (GAA TFET). The highly energetic particles (HEPs) such as heavy ions and alpha particles are allowed to strike the device at several locations along the channel to determine the sensitive location of the device. Once the sensitive location is determined, then the device is irradiated to different energies of heavy ions and alpha particles. Further, to get a proximate match as a practically exposed device, the device has been irradiated to several incident angles. Before analyzing the device's behaviour, the models used for the analysis are calibrated with the transfer characteristics of an experimentally published report on III-V GAA TFET. Thereafter, analysis of charge collection, transient current, hole generation in the channel, and different incident angles are analyzed. Finally, it is concluded that III-V GAA TFET shows better immunity towards different incident angles under a radiation environment when compared to Si GAA TFET. •The manuscript deals with the impact of heavy ions and alpha particle radiation on III-V Gate-All-Around Tunnel FETs.•The fast and slow accelerating nature of the ions are taken into consideration.•The manuscript incorporates several incident angles from varying directions.•The high-energetic particles on the off-state condition are also taken into consideration.