The collector current model of the IGBT based on the gate charge

• Published in: Microelectronics and reliability 2024-08, Vol.159, p.115432, Article 115432
• Main Authors: Guan, Li, Zeng, Peng, Zhang, Xin, Li, Qi, Chen, Yonghe, Zhai, Jianghui, Zhang, Feng, Yang, Baozheng, Cui, Xianwen, Ye, Jian, Cheng, Shi
• Format: Article
• Language: English
• Subjects: Collector current model; Double-pulse experiment; Gate charge; IGBT
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2024.115432

In this study, a dynamic and static collector current (IC) model of the IGBT based on the gate charge is proposed. The gate charge could be easily obtained by measuring the voltage across the gate mirror circuit capacitance, and the transconductance obtained from the IC–VGE curve is mainly used. This model does not need the device structure parameters such as doping concentration, length, and thickness, thus is low cost and highly convenient. First, the gate charge is derived by integrating the currents of the variable capacitors CGE and CGC during the turn-on and turn-off transients, and an analytical relationship between the dynamic IC and QG is researched. Second, a static collector current IC is established, and the gate charge is obtained through current integration during the period of the Miller capacitance plateau. The influence of the temperature on the static transconductance is studied, and the accuracy of the static current model is improved. Finally, the performance of the model is optimized with various voltages, temperatures, and currents. The experimental results reveal that the proposed model achieves a collector current error of less than 5.6 % under various operating conditions, which verifies the accuracy of the proposed model. •In this study, a dynamic and static collector current (IC) model of the IGBT based on the gate charge is proposed.•The gate charge could be easily obtained by measuring the voltage across the gate mirror circuit capacitance, and the transconductance obtained from the IC–VGE curve is mainly used.•This model does not need the device structure parameters such as doping concentration, length, and thickness, thus is low cost and highly convenient.•First, the gate charge is derived by integrating the currents of the variable capacitors CGE and CGC during the turn-on and turn-off transients, and an analytical relationship between the dynamic IC and QG is researched.•Second, a static collector current IC is established, and the gate charge is obtained through current integration during the period of the Miller capacitance plateau.•The influence of the temperature on the static transconductance is studied, and the accuracy of the static current model is improved.•Finally, the performance of the model is optimized with various voltages, temperatures, and currents.•The experimental results reveal that the proposed model achieves a collector current error of less than 5.6% under various operating conditions, which verifies