Evaluation of MOS interface trap generation after BTI stress using flicker noise

• Published in: Microelectronics and reliability 2024-09, Vol.160, p.115478, Article 115478
• Main Authors: Jiang, Yi, Chen, Yanning, Liu, Fang, Wu, Bo, Deng, Yongfeng, Gao, Dawei, Li, Junkang, Robertson, John, Zhang, Rui
• Format: Article
• Language: English
• Subjects: 1/f noise; BTI; Interface traps; MOSFETs; Threshold voltage shift
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2024.115478

In this study, the weak bias temperature instability (BTI) in both Si p- and n-MOSFETs was systematically investigated using subthreshold swing degradation (ΔS factor), threshold voltage shift (ΔVth) and flicker noise (1/f noise) characteristics. It is found that the 1/f noise characteristics exhibit more pronounced deterioration compared to the Si/SiO2 interface degeneration under weak BTI stress. Furthermore, the observed linear relationship between the 1/f noise characteristics and MOS interface trap density was confirmed by the carrier number fluctuation model, indicating that 1/f noise characteristics could be considered as a sensitive and effective indicator for assessing MOS interface quality after weak BTI stress. •BTI and 1/f noise characteristics at various Eox for Si p- and n-MOSFETs have been systematically investigated.•In the Si MOSFETs with thick gate oxide, S factor changes little while ΔVth exhibits a non-systematic relationship with Eox.•The linear correlation between 1/f noise and ΔDit is verified.•The 1/f noise characteristics are considered as a sensitive and effective indicator to assess the gate stack quality.