The electric memory properties of azo-chalcone derivatives based on different film forming processes

•A new azo chalcone derivative was designed and synthesized.•The active layer was prepared by solution spin coating and vacuum evaporation methods.•The electrical memory performance of the AZOC-2N based device was analysed.•The mechanism of electrical memory was studied by theoretical calculation si...

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Bibliographic Details
Published in:Journal of molecular structure 2021-03, Vol.1228, p.129480, Article 129480
Main Authors: Liu, Quan, Jin, Ling-Xia, Lu, Jiu-Fu
Format: Article
Language:English
Subjects:
Azo-chalcone derivative
Electrical memory
o-Nitro substituted
Spin coating
Vacuum evaporation
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Summary:•A new azo chalcone derivative was designed and synthesized.•The active layer was prepared by solution spin coating and vacuum evaporation methods.•The electrical memory performance of the AZOC-2N based device was analysed.•The mechanism of electrical memory was studied by theoretical calculation simulation. The azo chalcone derivative 3-(4-(dimethylamino)phenyl)diazenyl)phenyl)-1- (2-nitrophenyl)prop-2-en-1-one (AZOC-2N) was designed and synthesized. The active layer was prepared by solution spin coating and vacuum evaporation methods, respectively. The accumulation of molecular film was studied by AFM and crystalline structure. It was found that the device had a non-volatile binary write once read many (WORM) memory performance and device in which form by vacuum evaporation with a higher threshold voltage -2.1 V. Finally, the electrical memory performance of the device is analysed by theoretical calculation simulation. [Display omitted]
ISSN:0022-2860
1872-8014
DOI:10.1016/j.molstruc.2020.129480