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Enhanced hypersensitive (5D0→7F2) transition characteristics of Eu3+ doped β-Ga2O3 microrods

•Eu:β-Ga2O3 microrods were prepared by an inexpensive solid state reaction.•XRD, Raman and HR-TEM analyses confirm the monoclinic structure of β-Ga2O3.•PL study showed a sharp red emission at 612 nm (intra-4f transitions of Eu).•The possible energy transfer and quenching mechanism was proposed.•The...

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Published in:Journal of molecular structure 2025-02, Vol.1321, p.140144, Article 140144
Main Authors: Akshita, K.V., Raja, S., Sridharan, Moorthy Babu
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description •Eu:β-Ga2O3 microrods were prepared by an inexpensive solid state reaction.•XRD, Raman and HR-TEM analyses confirm the monoclinic structure of β-Ga2O3.•PL study showed a sharp red emission at 612 nm (intra-4f transitions of Eu).•The possible energy transfer and quenching mechanism was proposed.•The absolute quantum yield (3.82 %) was obtained for 0.5 mol.%.•The high color purity (93 %) was achieved for 0.5 mol.% Eu:β-Ga2O3 microrods. Exploring and realizing the luminescence characteristics of rare earth metal (RE) ions doped gallium oxide (Ga2O3) is crucial for developing optoelectronic device applications. The current research used the solid-state reaction approach to synthesize Ga2O3 microrods doped with various europium (Eu3+) concentrations (0.1, 0.2, 0.3, 0.5, 0.75, and 1 mol). X-ray diffraction (XRD) and Raman spectral analyses confirm the monoclinic structure of β-Ga2O3. The intensity of the Raman phonon modes decreased and a peak shift was observed for Eu:β-Ga2O3. The electron microscopy (SEM, TEM) images depicted a nearly uniform distribution of microrods for undoped and Eu:β-Ga2O3 samples. The interplanar distance (d = 0.290 nm, 0.561 nm, and 0.433 nm), from HR-TEM images, corresponding to (0 0 4), (1 0 0), and (1 0 2) crystallographic orientations confirm the monoclinic structure of β-Ga2O3. The elemental mapping images showed a nearly homogeneous Ga, O, and Eu distribution. The UV–visible diffuse reflectance spectroscopy (UV-DRS) showed a notable reduction in the bandgap as the Eu3+ concentration increased. The emission spectra of Eu: β-Ga2O3 microrods showed a narrow red emission at 612 nm (5D0 → 7F2), which relates to the 5D0 → 7Fj (j = 0, 1, 2, 3) energy level arising from an intra-4f transition of Eu3+ ions upon 394 and 465 nm excitation. The red emission was found to increase with Eu content up to 0.5 mol.%. A quenching of emission due to the multipole–multipole interactions was obtained beyond 0.5 mol.% of Eu. The absolute quantum yield (η) calculated for Eu: β-Ga2O3 (0.5 mol.%) was 3.82 %. The luminescence decay curve using the bi-exponential fit and the average lifetime (τ) of the Eu: β-Ga2O3 (0.5 mol.%) was found to be ∼0.172 ms. CIE chromaticity and correlated color temperature analyses of Eu:β-Ga2O3 microrods yielded a red emission with a superior color purity (93 %). The obtained results suggest that Eu:β-Ga2O3 (0.5 wt.%) microrods could be one of the potential candidates for red light sources. [Display omitted]
doi_str_mv 10.1016/j.molstruc.2024.140144
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Exploring and realizing the luminescence characteristics of rare earth metal (RE) ions doped gallium oxide (Ga2O3) is crucial for developing optoelectronic device applications. The current research used the solid-state reaction approach to synthesize Ga2O3 microrods doped with various europium (Eu3+) concentrations (0.1, 0.2, 0.3, 0.5, 0.75, and 1 mol). X-ray diffraction (XRD) and Raman spectral analyses confirm the monoclinic structure of β-Ga2O3. The intensity of the Raman phonon modes decreased and a peak shift was observed for Eu:β-Ga2O3. The electron microscopy (SEM, TEM) images depicted a nearly uniform distribution of microrods for undoped and Eu:β-Ga2O3 samples. The interplanar distance (d = 0.290 nm, 0.561 nm, and 0.433 nm), from HR-TEM images, corresponding to (0 0 4), (1 0 0), and (1 0 2) crystallographic orientations confirm the monoclinic structure of β-Ga2O3. The elemental mapping images showed a nearly homogeneous Ga, O, and Eu distribution. The UV–visible diffuse reflectance spectroscopy (UV-DRS) showed a notable reduction in the bandgap as the Eu3+ concentration increased. The emission spectra of Eu: β-Ga2O3 microrods showed a narrow red emission at 612 nm (5D0 → 7F2), which relates to the 5D0 → 7Fj (j = 0, 1, 2, 3) energy level arising from an intra-4f transition of Eu3+ ions upon 394 and 465 nm excitation. The red emission was found to increase with Eu content up to 0.5 mol.%. A quenching of emission due to the multipole–multipole interactions was obtained beyond 0.5 mol.% of Eu. The absolute quantum yield (η) calculated for Eu: β-Ga2O3 (0.5 mol.%) was 3.82 %. The luminescence decay curve using the bi-exponential fit and the average lifetime (τ) of the Eu: β-Ga2O3 (0.5 mol.%) was found to be ∼0.172 ms. CIE chromaticity and correlated color temperature analyses of Eu:β-Ga2O3 microrods yielded a red emission with a superior color purity (93 %). The obtained results suggest that Eu:β-Ga2O3 (0.5 wt.%) microrods could be one of the potential candidates for red light sources. 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Exploring and realizing the luminescence characteristics of rare earth metal (RE) ions doped gallium oxide (Ga2O3) is crucial for developing optoelectronic device applications. The current research used the solid-state reaction approach to synthesize Ga2O3 microrods doped with various europium (Eu3+) concentrations (0.1, 0.2, 0.3, 0.5, 0.75, and 1 mol). X-ray diffraction (XRD) and Raman spectral analyses confirm the monoclinic structure of β-Ga2O3. The intensity of the Raman phonon modes decreased and a peak shift was observed for Eu:β-Ga2O3. The electron microscopy (SEM, TEM) images depicted a nearly uniform distribution of microrods for undoped and Eu:β-Ga2O3 samples. The interplanar distance (d = 0.290 nm, 0.561 nm, and 0.433 nm), from HR-TEM images, corresponding to (0 0 4), (1 0 0), and (1 0 2) crystallographic orientations confirm the monoclinic structure of β-Ga2O3. The elemental mapping images showed a nearly homogeneous Ga, O, and Eu distribution. The UV–visible diffuse reflectance spectroscopy (UV-DRS) showed a notable reduction in the bandgap as the Eu3+ concentration increased. The emission spectra of Eu: β-Ga2O3 microrods showed a narrow red emission at 612 nm (5D0 → 7F2), which relates to the 5D0 → 7Fj (j = 0, 1, 2, 3) energy level arising from an intra-4f transition of Eu3+ ions upon 394 and 465 nm excitation. The red emission was found to increase with Eu content up to 0.5 mol.%. A quenching of emission due to the multipole–multipole interactions was obtained beyond 0.5 mol.% of Eu. The absolute quantum yield (η) calculated for Eu: β-Ga2O3 (0.5 mol.%) was 3.82 %. The luminescence decay curve using the bi-exponential fit and the average lifetime (τ) of the Eu: β-Ga2O3 (0.5 mol.%) was found to be ∼0.172 ms. CIE chromaticity and correlated color temperature analyses of Eu:β-Ga2O3 microrods yielded a red emission with a superior color purity (93 %). The obtained results suggest that Eu:β-Ga2O3 (0.5 wt.%) microrods could be one of the potential candidates for red light sources. [Display omitted]</description><subject>Color purity</subject><subject>Eu:β-Ga2O3</subject><subject>HR-TEM</subject><subject>Microrods</subject><subject>PL lifetime</subject><subject>Quantum yield</subject><subject>Red emission</subject><issn>0022-2860</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2025</creationdate><recordtype>article</recordtype><recordid>eNqFkE1KA0EQRnuhYIxeQXqpyIxVPZ2Zzk6JSRQC2ei66V_SIZkJ3ZNALuABPIoH8RCexInRtav6KHhfFY-QK4QcAcu7Zb5uVqmNW5MzYDxHDsj5CekBMJYxUcIZOU9pCQDYAT0ix_VC1cZZuthvXEyuTqENO0evB4_w9fZeTdgNbaP6WTc1NQsVlWldDKkNJtHG0_G2uKW22XQdnx_ZVLF5QdfBxCY2Nl2QU69WyV3-zj55nYxfRk_ZbD59Hj3MMoPAeWYrb1klBmCxFANeKa68r9AJDlAyhxorOyxViWhEF7QeghZKaGRa-2Hhiz4pj73d3ZSi83ITw1rFvUSQBzVyKf_UyIMaeVTTgfdH0HXf7YKLMpngDkZCdKaVtgn_VXwDk3ZzqQ</recordid><startdate>20250205</startdate><enddate>20250205</enddate><creator>Akshita, K.V.</creator><creator>Raja, S.</creator><creator>Sridharan, Moorthy Babu</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-0576-9276</orcidid></search><sort><creationdate>20250205</creationdate><title>Enhanced hypersensitive (5D0→7F2) transition characteristics of Eu3+ doped β-Ga2O3 microrods</title><author>Akshita, K.V. ; Raja, S. ; Sridharan, Moorthy Babu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1044-d7fd27850d168547a4aff71e840062e1b17d96a611c8d96bb90b8a8b12bbf93f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2025</creationdate><topic>Color purity</topic><topic>Eu:β-Ga2O3</topic><topic>HR-TEM</topic><topic>Microrods</topic><topic>PL lifetime</topic><topic>Quantum yield</topic><topic>Red emission</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Akshita, K.V.</creatorcontrib><creatorcontrib>Raja, S.</creatorcontrib><creatorcontrib>Sridharan, Moorthy Babu</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of molecular structure</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Akshita, K.V.</au><au>Raja, S.</au><au>Sridharan, Moorthy Babu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced hypersensitive (5D0→7F2) transition characteristics of Eu3+ doped β-Ga2O3 microrods</atitle><jtitle>Journal of molecular structure</jtitle><date>2025-02-05</date><risdate>2025</risdate><volume>1321</volume><spage>140144</spage><pages>140144-</pages><artnum>140144</artnum><issn>0022-2860</issn><abstract>•Eu:β-Ga2O3 microrods were prepared by an inexpensive solid state reaction.•XRD, Raman and HR-TEM analyses confirm the monoclinic structure of β-Ga2O3.•PL study showed a sharp red emission at 612 nm (intra-4f transitions of Eu).•The possible energy transfer and quenching mechanism was proposed.•The absolute quantum yield (3.82 %) was obtained for 0.5 mol.%.•The high color purity (93 %) was achieved for 0.5 mol.% Eu:β-Ga2O3 microrods. Exploring and realizing the luminescence characteristics of rare earth metal (RE) ions doped gallium oxide (Ga2O3) is crucial for developing optoelectronic device applications. The current research used the solid-state reaction approach to synthesize Ga2O3 microrods doped with various europium (Eu3+) concentrations (0.1, 0.2, 0.3, 0.5, 0.75, and 1 mol). X-ray diffraction (XRD) and Raman spectral analyses confirm the monoclinic structure of β-Ga2O3. The intensity of the Raman phonon modes decreased and a peak shift was observed for Eu:β-Ga2O3. The electron microscopy (SEM, TEM) images depicted a nearly uniform distribution of microrods for undoped and Eu:β-Ga2O3 samples. The interplanar distance (d = 0.290 nm, 0.561 nm, and 0.433 nm), from HR-TEM images, corresponding to (0 0 4), (1 0 0), and (1 0 2) crystallographic orientations confirm the monoclinic structure of β-Ga2O3. The elemental mapping images showed a nearly homogeneous Ga, O, and Eu distribution. The UV–visible diffuse reflectance spectroscopy (UV-DRS) showed a notable reduction in the bandgap as the Eu3+ concentration increased. The emission spectra of Eu: β-Ga2O3 microrods showed a narrow red emission at 612 nm (5D0 → 7F2), which relates to the 5D0 → 7Fj (j = 0, 1, 2, 3) energy level arising from an intra-4f transition of Eu3+ ions upon 394 and 465 nm excitation. The red emission was found to increase with Eu content up to 0.5 mol.%. A quenching of emission due to the multipole–multipole interactions was obtained beyond 0.5 mol.% of Eu. The absolute quantum yield (η) calculated for Eu: β-Ga2O3 (0.5 mol.%) was 3.82 %. The luminescence decay curve using the bi-exponential fit and the average lifetime (τ) of the Eu: β-Ga2O3 (0.5 mol.%) was found to be ∼0.172 ms. CIE chromaticity and correlated color temperature analyses of Eu:β-Ga2O3 microrods yielded a red emission with a superior color purity (93 %). The obtained results suggest that Eu:β-Ga2O3 (0.5 wt.%) microrods could be one of the potential candidates for red light sources. [Display omitted]</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.molstruc.2024.140144</doi><orcidid>https://orcid.org/0000-0003-0576-9276</orcidid></addata></record>
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subjects Color purity
Eu:β-Ga2O3
HR-TEM
Microrods
PL lifetime
Quantum yield
Red emission
title Enhanced hypersensitive (5D0→7F2) transition characteristics of Eu3+ doped β-Ga2O3 microrods
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