Studies of temperature-dependent Raman spectra of thin PtSe2 layers on Al2O3 substrate

[Display omitted] The results of temperature-dependent Raman spectroscopy studies of thin layers of PtSe2 (1–10 monolayers) deposited on an Al2O3 substrate are disscused in this paper. A redshift of the vibrational Raman modes (Eg and A1g) is observed when the thickness of PtSe2 and temperature incr...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2023-11, Vol.297, p.116728, Article 116728
Main Authors: Raczyński, Jan, Nowak, Ewelina, Nowicki, Marek, El-Ahmar, Semir, Szybowicz, Mirosław, Koczorowski, Wojciech
Format: Article
Language:English
Subjects:
PtSe2
Raman spectroscopy
Temperature-dependent Raman spectroscopy
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Summary:[Display omitted] The results of temperature-dependent Raman spectroscopy studies of thin layers of PtSe2 (1–10 monolayers) deposited on an Al2O3 substrate are disscused in this paper. A redshift of the vibrational Raman modes (Eg and A1g) is observed when the thickness of PtSe2 and temperature increase. The results allow for determining the thickness of the PtSe2 layer deposited on the Al2O3 substrate by analysing the Raman shift of the PtSe2 modes (Eg and A1g) and the screening effects on the surface vibration mode (A1g). The other original result is the determination of the stresses and doping effects in PtSe2 for the considered range of layer thicknesses by analyses of the correlative plot. Finally, the thermal dependences of the Raman spectra are discussed regarding Raman shifts and intensity. The atomic force microscopy measurements show the presence of residual contamination with surface densities varying between samples.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2023.116728