Simulation Analysis of Hafnium-based-Oxide and Effects of Metallization on Electrical Performance of Gate-All-Around Finfet Devices

• Published in: Procedia materials science 2015, Vol.11, p.444-448
• Main Authors: Salami, M., Abadi, M.H. Shahrokh
• Format: Article
• Language: English
• Subjects: Gate stack material and high-k material; Gate-all-around FinFET; Short channel effects
• ISSN: 2211-8128; 2211-8128
• DOI: 10.1016/j.mspro.2015.11.037

Simulation analysis, using Atlas Silvaco® has been performed to determine the effect of gate oxide and type of the metallization on the electrical performance of a Si-channel lightly doped n-type gate-all-around FinFET (n–-GAA-FinFET). The oxide of the gate (GOX) was developed using hafnium dioxide (HfO2) and hafnium silicon oxide (HfSiO4) to investigate the effects of short channel and the switching parameters of the device. The simulation results are shown that the HfO2 can significantly increase the ON-state current and the threshold voltage of the device compared to the conventional oxides. Furthermore, it was observed that the material with work function lower than the customary metallization, such as Ag, Ta, Mo, and Ti as the gate contact metallization, can further increase the ON-state current, and simultaneously, can lower the threshold voltage of the device. The results also show a remarkable improvement into the logarithmic ratio of the On-state to the OFF-state currents of the device in order of 12 using the metal/HfSiO4/HfO2 gate stack.