Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition

• Published in: Materials science in semiconductor processing 2005-02, Vol.8 (1), p.121-124
• Main Authors: Jeong, Youngcheon, Sakuraba, Masao, Murota, Junichi
• Format: Article
• Language: English
• Subjects: Carrier concentration; Chemical vapor deposition; Hall mobility; Nitrogen atomic layer doping; Silicon epitaxial growth
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2004.09.031

Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at the N amount of 5×10 13 cm −2/layer. Sheet carrier concentration in the temperature region higher than 160 K drastically increases with increase of the measurement temperature. The ionization energy of the donor level is estimated about 150–180 meV and almost independent of the N amount. Measured Hall mobility is as high as that of the uniformly P-doped Si with the P concentration of 10 16–10 17 cm −3 in the measurement temperature range of 160–300 K.