DLTS studies of irradiation-induced defects in p-type germanium

In the present investigation, we have made use of our newly produced n +p-mesa diodes on Ga-doped, 2-Ω cm Ge-single crystals to study irradiation-induced defects in p-type Ge. Irradiation with electrons shows five distinct levels introduced. The use of protons and α-particles (and at different doses...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2006-08, Vol.9 (4), p.597-599
Main Authors: Christian Petersen, M., Lindberg, C.E., Nielsen, K. Bonde, Mesli, A., Nylandsted Larsen, A.
Format: Article
Language:English
Subjects:
Applied sciences
Defects
Diodes
DLTS (irradiation)
Electronics
Exact sciences and technology
Germanium
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:In the present investigation, we have made use of our newly produced n +p-mesa diodes on Ga-doped, 2-Ω cm Ge-single crystals to study irradiation-induced defects in p-type Ge. Irradiation with electrons shows five distinct levels introduced. The use of protons and α-particles (and at different doses) for irradiation, reveals four new levels, and allows for the possibility of connecting some of the levels to the divacancy.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2006.08.050