Optoelectronic properties of CdTe/Si heterojunction prepared by pulsed Nd:YAG-laser deposition technique

The present study is on the optoelectronic properties of isotype CdTe/c-Si heterojunction photodetector made by deposition of CdTe by pulsed laser deposition (PLD) technique on clean monocrystalline Si. Optical, electrical and structural properties of grown CdTe film were investigated. The optical d...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2007-02, Vol.10 (1), p.19-23
Main Authors: Ismail, Raid A., Hassan, Khaki I., Abdulrazaq, Omar A., Abode, Wesam H.
Format: Article
Language:English
Subjects:
Applied sciences
CdTe
Compound structure devices
Electronics
Exact sciences and technology
Heterojunction
Optoelectronic devices
Photodetector
PLD
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thin film
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Summary:The present study is on the optoelectronic properties of isotype CdTe/c-Si heterojunction photodetector made by deposition of CdTe by pulsed laser deposition (PLD) technique on clean monocrystalline Si. Optical, electrical and structural properties of grown CdTe film were investigated. The optical data show that the optical band gap of CdTe was around 1.45 eV at 300 K. The CdTe/Si junction exhibits fair diode rectification and the soft breakdown occurred at V B>9 V. Dark and illuminated I– V characteristics of the CdTe/Si photodetector are examined at room temperature. The photodetector showed good photosensitivity in the visible and near-infrared regions with a value as high as 0.5A/W at 950 nm.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2006.12.001