Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique

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Bibliographic Details
Published in:Materials science in semiconductor processing 2010-12, Vol.13 (4), p.257-266
Main Authors: MENDA, Ugur Deneb, ÖZDEMIR, Orhan, TATAR, Beyhan, ÜRGEN, Mustafa, KUTLU, Kubilay
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Microelectronic fabrication (materials and surfaces technology)
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Vapor phase epitaxy
growth from vapor phase
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ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2010.12.002