Magnetism in melt grown dilute magnetic semiconductor Ge1−xMnx from electron density

Dilute magnetic semiconductor materials Ge1−xMnx (x=0.04, 0.06 and 0.10) have been grown via a melt growth technique. The influence of the intermetallic secondary phases like Mn-poor Ge8Mn11 and Mn-rich Ge3Mn5 has been analyzed quantitatively from charge density studies. Three-dimensional charge den...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2012-12, Vol.15 (6), p.731-739
Main Authors: Sheeba, R.A.J.R., Saravanan, R., John Berchmans, L.
Format: Article
Language:English
Subjects:
Antiferromagnetism
Charge density
Dilute magnetic semiconductor
Ferromagnetism
Maximum entropy method
Pair distribution function
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Summary:Dilute magnetic semiconductor materials Ge1−xMnx (x=0.04, 0.06 and 0.10) have been grown via a melt growth technique. The influence of the intermetallic secondary phases like Mn-poor Ge8Mn11 and Mn-rich Ge3Mn5 has been analyzed quantitatively from charge density studies. Three-dimensional charge density pictures, arrangement of charges on two-dimensional Miller planes and one-dimensional charge density profiles between nearest neighbors along the bond path have been enumerated using a statistical approach, the maximum entropy method using experimental X-ray structure factors. The Rietveld method and pair distribution functions (PDF) have been used to analyze the X-ray information for local structural features. A correlation between spatial charge distribution and magnetic behavior of the chosen system has been achieved using a charge density route.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2012.03.007