Effect of tantalum doping on the structural and optical properties of RF magnetron sputtered indium oxide thin films

• Published in: Materials science in semiconductor processing 2015-09, Vol.37, p.112-122
• Main Authors: Krishnan, R. Reshmi, Sreedharan, R. Sreeja, Sudheer, S.K., Sudarsanakumar, C., Ganesan, V., Srinivasan, P., Pillai, V.P. Mahadevan
• Format: Article
• Language: English
• Subjects: Micro-Raman spectra; Nanostructured films; Photoluminescence emission; RF magnetron sputtering; Tantalum doping in indium oxide; Thickness estimation using lateral SEM images
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2015.02.033

Tantalum doped indium oxide films are prepared by RF magnetron sputtering technique and the films are annealed in air at 300°C. The effect of Ta doping on the structural, morphological, and optical properties of the annealed films are studied using techniques like X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), EDX analysis, micro-Raman, UV–visible and photoluminescence spectroscopy and electrical measurements. The XRD patterns present a cubic bixbyite structure for all the films with preferred orientation along the (222) plane. The lattice constant estimation presents a reduction in lattice size with Ta doping. The W–H plot shows a tensile strain for all the films and also indicates the presence of strain induced broadening of the XRD peaks. The Raman spectra present all the characteristic modes of In2O3 cubic bixbyite phase. FESEM and AFM images show the uniform and dense distribution of smaller grains in the films. All the films show high transmittance (above 85%) in the 400–900nm region. Electrical measurement shows a systematic increase of carrier concentration and electrical conductivity with increase in Ta doping concentration. Band gap energy increases with increase in Ta doping concentration. All the films show intense PL emission in the UV region.