AlxGa1−xN/GaN/AlN heterostructures grown on Si(111) substrates by MBE for MSM UV photodetector applications

• Published in: Materials science in semiconductor processing 2015-06, Vol.34, p.214-223
• Main Authors: Yusoff, M.Z. Mohd, Hassan, Z., Hassan, H. Abu, Abdullah, M.J., Rusop, M., Pakhuruddin, M.Z.
• Format: Article
• Language: English
• Subjects: AlxGa1−xN; III-Nitride; MBE; Silicon; XRD
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2015.02.048

AlxGa1−xN/GaN/AlN heterostructures on silicon (Si) substrate was developed by nitrogen plasma-assisted molecular beam epitaxy (MBE) and their properties were investigated by scanning electron microscopy (SEM), electron dispersive X-ray (EDX), atomic force microscopy (AFM), high resolution X-ray diffraction (XRD), Raman spectroscopy and Hall effect measurements. High purity gallium (7N) and aluminum (6N5) were used in the Knudsen cells. High purity nitrogen with 7N purity was supplied to radio frequency (RF) source to generate reactive nitrogen species. The nitrogen pressure and a discharge power were kept at 1.5×10−5Torr and 300W, respectively. From SEM measurements, the surface morphology of samples presented 2- and 3-dimensional growth modes. The EDX measurements showed that there were no foreign elements in the grown samples. The HR-XRD measurement has confirmed that the AlxGa1−xN/GaN/AlN heterostructures samples were epitaxially grown on Si substrate. All the dominant E2 phonon modes were found in Raman spectra results. Lastly, AlxGa1−xN/GaN/AlN heterostructures based metal–semiconductor–metal (MSM) UV photodetectors were fabricated and the electrical characteristics of the devices were investigated by using current–voltage (I–V) and photo-conductivity measurements. The devices presented good I–V and photoconductivity characteristics.