An approach to increase the integration rate of planar drift heterobipolar transistors

In this paper, we introduce an approach of increasing the degree of integration drift heterobipolar transistors. This approach is based on the formation of desired heterostructure configuration, its doping carried out by diffusion or implantation of necessary areas and optimizing the annealing and/o...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2015-06, Vol.34, p.260-268
Main Authors: Pankratov, E.L., Bulaeva, E.A.
Format: Article
Language:English
Subjects:
Drift heterobipolar transistors
Increase integration rate
Planar heterobipolar transistors
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Summary:In this paper, we introduce an approach of increasing the degree of integration drift heterobipolar transistors. This approach is based on the formation of desired heterostructure configuration, its doping carried out by diffusion or implantation of necessary areas and optimizing the annealing and/or radiation-induced defects.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2015.02.054