Using the acetylacetonates of zinc and aluminium for the Metalorganic Chemical Vapour Deposition of aluminium doped zinc oxide films

• Published in: Materials science in semiconductor processing 2015-11, Vol.39, p.467-475
• Main Authors: Nebatti, Abdelkader, Pflitsch, Christian, Curdts, Benjamin, Atakan, Burak
• Format: Article
• Language: English
• Subjects: Aluminium acetylacetonate; Metalorganic Chemcical Vapour Deposition; TCO; Transparent conducting oxide; Zinc acetylacetonate; Zinc oxide
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2015.05.053

Metalorganic Chemical Vapour Deposition is a promising method for the growth of thin aluminium doped zinc oxide films (ZnO:Al), a material with potential application as transparent conducting oxide (TCO), e.g. for the use as front electrode in solar cells. For the low-cost deposition, the choice of the precursors is extremely important. Here we present the deposition of quite homogeneous films from the acetylacetonates of zinc and aluminium that are rather cheap, commercially available and easy to handle. A user-made CVD-reactor activating the deposition process by the light of halogen lamps was used for film deposition. Well-ordered films with an aluminium content between 0 and 8% were grown on borosilicate glass and Si(100). On both types of substrate, the films are crystalline and show a preferred orientation along the (002)-direction. The 0.3 to 0.5μm thick films are highly transparent in the visible region. The best films show a low electric resistivity between 2.4 and 8mΩcm.