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Pure and zirconium-doped manganese(II,III) oxide: Investigations on structural and conduction-related properties within the Lattice Compatibility Theory scope
Manganese(II,III) oxide Mn3O4 thin films have been deposited on glass substrates using a simple spray pyrolysis method. Zirconium doping protocol was applied in order to verify some recently claimed enhancements of hausmannite physical properties. Gradual doping was achieved with ratio [Zr]/[Mn]=1%,...
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Published in: | Materials science in semiconductor processing 2015-12, Vol.40, p.224-229 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Manganese(II,III) oxide Mn3O4 thin films have been deposited on glass substrates using a simple spray pyrolysis method. Zirconium doping protocol was applied in order to verify some recently claimed enhancements of hausmannite physical properties. Gradual doping was achieved with ratio [Zr]/[Mn]=1%, 2% and 3% in addition to pure Mn3O4. Beyond classical characterization techniques, effects of Zr-doping were studied in reference to the expected use in rechargeable batteries and sensing devices. Moreover, additional opto-thermal investigation and analyses of the Lattice Compatibility Theory led to a founded understanding to the dynamics of Zirconium ion incorporation inside Mn3O4 host matrices. |
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ISSN: | 1369-8001 1873-4081 |
DOI: | 10.1016/j.mssp.2015.06.034 |