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Pure and zirconium-doped manganese(II,III) oxide: Investigations on structural and conduction-related properties within the Lattice Compatibility Theory scope

Manganese(II,III) oxide Mn3O4 thin films have been deposited on glass substrates using a simple spray pyrolysis method. Zirconium doping protocol was applied in order to verify some recently claimed enhancements of hausmannite physical properties. Gradual doping was achieved with ratio [Zr]/[Mn]=1%,...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2015-12, Vol.40, p.224-229
Main Authors: Ben Said, L., Larbi, T., Yumak, A., Boubaker, K., Amlouk, M.
Format: Article
Language:English
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Summary:Manganese(II,III) oxide Mn3O4 thin films have been deposited on glass substrates using a simple spray pyrolysis method. Zirconium doping protocol was applied in order to verify some recently claimed enhancements of hausmannite physical properties. Gradual doping was achieved with ratio [Zr]/[Mn]=1%, 2% and 3% in addition to pure Mn3O4. Beyond classical characterization techniques, effects of Zr-doping were studied in reference to the expected use in rechargeable batteries and sensing devices. Moreover, additional opto-thermal investigation and analyses of the Lattice Compatibility Theory led to a founded understanding to the dynamics of Zirconium ion incorporation inside Mn3O4 host matrices.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2015.06.034