Strain-induced effects in p-type Si whiskers at low temperatures

In this study, we investigated strain-induced effects in p-type Si whiskers at low temperatures of 4.2–70K in DC and AC currents. Si whiskers with boron concentrations close to the metal–insulator transition (MIT) were investigated. We determined the influence of strain (up to 5×10–3 r.u.) on the ac...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2015-12, Vol.40, p.766-771
Main Authors: Druzhinin, A., Ostrovskii, I., Khoverko, Y., Koretskii, R.
Format: Article
Language:English
Subjects:
Gauge factor
Impedance
Sensor
Silicon whiskers
Strain
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Summary:In this study, we investigated strain-induced effects in p-type Si whiskers at low temperatures of 4.2–70K in DC and AC currents. Si whiskers with boron concentrations close to the metal–insulator transition (MIT) were investigated. We determined the influence of strain (up to 5×10–3 r.u.) on the active and reactive resistivity, thereby detecting inductive and capacity changes. We discuss the low temperature transport of charge carriers in Si boron-doped whiskers. The current was found to pass through the subsurface of the whiskers, which was accompanied by the capture and reemission of charge carriers by Tamm states. A high sensitivity sensor with a gauge factor of GF4,2K~15,000 is proposed for the measurement of strain at an AC frequency of 100kHz at low temperatures, including T=4.2K.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2015.07.015