Fabrication and electrical characterization of Al/p-ZnIn2Se4 thin film Schottky diode structure

Polycrystalline thin films of ternary ZnIn2Se4 compound with p-type conductivity were deposited on a pre-deposited aluminium (Al) film by a flash evaporation technique. A Schottky diode comprising of Al/p-ZnIn2Se4 structure was fabricated and characterized in the temperature range 303–323K in dark c...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2016-11, Vol.54, p.29-35
Main Authors: Dhruv, D.K., Patel, B.H.
Format: Article
Language:English
Subjects:
Al/p-ZnIn2Se4 Schottky diode
Energy band diagram
Flash evaporation
I-V and C-V characteristics
Schottky barrier height (SBH)
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Summary:Polycrystalline thin films of ternary ZnIn2Se4 compound with p-type conductivity were deposited on a pre-deposited aluminium (Al) film by a flash evaporation technique. A Schottky diode comprising of Al/p-ZnIn2Se4 structure was fabricated and characterized in the temperature range 303–323K in dark condition. The Schottky diode was subjected to current (I)-voltage (V) and capacitance (C)-voltage (V) characterization. The Al/p-ZnIn2Se4 Schottky diode showed behaviour typical of a p-n junction diode. The devices showed very good diode behaviour with the rectification ratio of about 105 at 1.0V in dark. The Schottky diode ideality factor, barrier height, carrier concentration, etc. were derived from I-V and C-V measurements. At lower applied voltages (V≤0.5V), the electrical conduction was found to take place by thermionic emission (TE) whereas at higher voltages (V>0.5V), a space charge limited conduction mechanism (SCLC) was observed. An energy band diagram was constructed for fabricated Al/p-ZnIn2Se4 Schottky diode.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2016.06.012