The effect of oxide layer thickness on the quantification of 1.5 MeV γ –radiation induced interface traps in the Ag/SiO 2 /Si MOS devices

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Bibliographic Details
Published in:Materials science in semiconductor processing 2017-09, Vol.68, p.30-37
Main Authors: Khan, M. Rizwan, Ishfaq, Muhammad, Ali, Awais, Bhatti, A.S.
Format: Article
Language:English
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ISSN:1369-8001
DOI:10.1016/j.mssp.2017.05.026