Synthesis of highly conductive cobalt thin films by LCVD at atmospheric pressure

• Published in: Materials science in semiconductor processing 2017-09, Vol.68, p.245-251
• Main Authors: Jeong, Kyunghoon, Lee, Jiwon, Byun, Injae, Seong, Myung-jun, Park, Jongsoo, Kim, Hyoun Woo, Kim, Moon J., Kim, Jae-Hun, Lee, Jaegab
• Format: Article
• Language: English
• Subjects: Atmospheric laser chemical vapor deposition (ALCVD); Co2(CO)8; Direct writing; Grain size; Low resistivity; Oxygen contamination
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2017.06.032

We have deposited very low resistant Co films on SiO2-coated Si substrates using UV pulsed laser pyrolytic decomposition of Co2(CO)8 with 355nm laser radiation at atmospheric pressure. Facile decomposition of the precursors and the use of Ar curtain enable the deposition of relatively pure Co (with O less than 7% and negligible C) at the power of 1.11–3.33W, and of pure Co at 6.67W. The resistivity decreases from 58 to 19µΩ-cm as the power increases from 2.22 to 3.33W, showing inverse-linear dependence on grain size. In addition, further increase of the power to 6.67W decreases the resistivity to 9µΩ-cm, due to both the growth of large grains with negligible contaminants, and the adverse effect of surface roughness. The effects of oxygen contaminants on the resistivity can be minimal, because of its presence in the form of oxide. These low resistant fine metal lines deposited by a direct-writing laser chemical vapor deposition technique at atmospheric pressure have been reported for the first time.