Structural analysis of polycrystalline silicon thin films produced by two different ICPCVD approaches

The structural properties of polycrystalline Si (poly-Si) thin films formed by using ICPCVD and LIA-ICPCVD methods under different H dilution ratios were investigated. Columnar-structured poly-Si films with 82% crystalline volume fraction were obtained by ICPCVD at a lower H dilution ratio of 50%. I...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2018-03, Vol.75, p.51-57
Main Authors: Li, Zhongli, Letha, Ayra Jagadhamma, Wei, Jia-Fu, Lu, Man-Ling, Liu, Yijian, Hwang, Huey-Liang, Zhang, Yafei
Format: Article
Language:English
Subjects:
ICPCVD
LIA-ICPCVD
Polycrystalline
Silicon
Thin films
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Summary:The structural properties of polycrystalline Si (poly-Si) thin films formed by using ICPCVD and LIA-ICPCVD methods under different H dilution ratios were investigated. Columnar-structured poly-Si films with 82% crystalline volume fraction were obtained by ICPCVD at a lower H dilution ratio of 50%. In the case of LIA-ICPCVD, to obtain nearly the same crystalline volume fraction (80%), a higher H dilution ratio (98%) was required and the poly-Si films obtained were mostly of cone-shaped columnar structure. The reverse effect is due to the difference in the antenna design in these systems, which changes the plasma characteristics. Multilayer deposition process, and subsequent H treatment and annealing were used in ICPCVD for producing highly crystallized poly-Si thin films from microcrystalline Si films. In the case of LIA-ICPCVD, annealing the ITO coated glass substrate in the deposition chamber prior to Si:H film deposition together with the optimization of process pressure yielded highly crystalline poly-Si film.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2017.08.016