Forward and reverse current aging of GaN-based light-emitting diodes fabricated with Ag-based reflective electrodes

In this study, the effects of forward and reverse current aging on the reliability characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag-based reflective electrodes were investigated. The LEDs showed a noticeable degradation in output after forward current (100 mA) or reverse...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2019-02, Vol.90, p.72-77
Main Authors: Jeong, Seonghoon, Kim, Min Soo, Lee, Sung-Nam, Kim, Hyunsoo
Format: Article
Language:English
Subjects:
Ag migration
Current crowding
Light emitting diode
Reliability
Reverse current aging
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Summary:In this study, the effects of forward and reverse current aging on the reliability characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag-based reflective electrodes were investigated. The LEDs showed a noticeable degradation in output after forward current (100 mA) or reverse current (−0.1 mA) aging for 24 h. This could be due to the significantly increased leakage currents caused by disruptions of Ni/Ag/Pt reflective electrodes via Ag migration after forward current aging (causing surface leakage), or via electrode destruction near the V-defect region after reverse current aging (causing bulk leakage). Notably, this degradation behavior could be explained in terms of current crowding.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2018.10.005