Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs

In previous works, an alternative gate oxide configuration, based on a boron treatment, was proposed in order to enhance the SiO2/SiC interface quality, enabling high channel mobility n-channel 4H-SiC lateral MOSFETs. In this paper we study the effect of this treatment on 6H-SiC MOSFETs and we compa...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2019-04, Vol.93, p.357-359
Main Authors: Cabello, Maria, Soler, Victor, Knoll, Lars, Montserrat, Josep, Rebollo, Jose, Mihaila, Andrei, Godignon, Philippe
Format: Article
Language:English
Subjects:
4H-SiC
6H-SiC
Boron
Field effect mobility
MOSFET
NIOTs
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Summary:In previous works, an alternative gate oxide configuration, based on a boron treatment, was proposed in order to enhance the SiO2/SiC interface quality, enabling high channel mobility n-channel 4H-SiC lateral MOSFETs. In this paper we study the effect of this treatment on 6H-SiC MOSFETs and we compare it to their 4H-SiC counterparts. The gate oxide boron treatment highly increases mobility values in 4H-SiC whereas the increase is lower in 6H-SiC. The mobility increase by the boron treatment in 4H-SiC MOSFETs is related to the decrease of near interface oxide traps (NIOTs). Then, a different NIOTs density and energy location can be seen as a possible explanation for the different mobility improvement behavior seen in both polytypes.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2019.01.016