Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma

The study of the InAlAs surface oxidation process in the Townsend gas-discharge plasma of gas-mixture Ar, O2, CF4 at room temperature was performed. The anodic layer thickness distribution, the morphology of InAlAs surface and anodic layer/InAlAs interface, as well as the layer chemical composition,...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2019-11, Vol.102, p.104611, Article 104611
Main Authors: Aksenov, M.S., Gutakovskii, A.K., Prosvirin, I.P., Dmitriev, D.V., Nedomolkina, A.A., Valisheva, N.A.
Format: Article
Language:English
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Summary:The study of the InAlAs surface oxidation process in the Townsend gas-discharge plasma of gas-mixture Ar, O2, CF4 at room temperature was performed. The anodic layer thickness distribution, the morphology of InAlAs surface and anodic layer/InAlAs interface, as well as the layer chemical composition, were investigated by scanning ellipsometry, AFM, HREM and XPS methods. It was shown that the presented oxidation technique provides a controlled formation of non-fluorinated and fluorinated anodic layers on the InAlAs surface with a sharp interface and unchanged surface morphology. The non-fluorinated anodic layer mainly consists of semiconductor element oxides (In2O3, Al2O3, As2O3). The oxidation in the fluorine-containing medium leads to the formation of In, Al and As oxyfluorides.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2019.104611