Fabrication of high surface area AgI incorporated porous BiVO4 heterojunction photocatalysts

The low surface area and photogenerated charge carrier recombination rate severely affects the usability of a photocatalysts. In this work, a visible light active AgI/BiVO4 photocatalyst was fabricated via a low temperature one step hydrothermal method. Low temperature preparation results in a porou...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2020-02, Vol.106, p.104756, Article 104756
Main Authors: Lakhera, Sandeep Kumar, Venkataramana, R., Mathew, Georgeena, Hafeez, Hafeez Yusuf, Neppolian, Bernaurdshaw
Format: Article
Language:English
Subjects:
AgI
BiVO4
Charge separation
Heterojunction
Photocatalysts
Surface area
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Summary:The low surface area and photogenerated charge carrier recombination rate severely affects the usability of a photocatalysts. In this work, a visible light active AgI/BiVO4 photocatalyst was fabricated via a low temperature one step hydrothermal method. Low temperature preparation results in a porous and very high surface area (114 m2/g) BiVO4 photocatalysts. XRD, FTIR, Raman and BET surface area analysis revealed that AgI is bonded as well as embedded in the porous structure of BiVO4, which causes shrinking of the BiVO4 lattice. Compare to bare BiVO4, the AgI/BiVO4 photocatalyst shows nearly 1.7 times higher photocurrent response and 43% higher photocatalytic activity. The significantly high photocatalytic activity ascribed to the very high surface area, and the effective charge separation at the AgI/BiVO4 p-n heterojunction. Further, based on UV-DRS and Mott-Schottky measurements, a plausible charge transfer mechanism is proposed. •Design of a high surface area (114 m2/g) and porous BiVO4 photocatalysts.•Low temperature hydrothermal synthesis of efficient AgI/BiVO4 photocatalysts.•AgI/BiVO4 exhibits 1.7 times higher photocurrent compared to bare BiVO4.•AgI/BiVO4 shows 43% higher photocatalytic activity compare to bare BiVO4.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2019.104756