Self-powered broadband photodetection using PbS decorated ZnO nanorods/reduced graphene oxide junction

• Published in: Materials science in semiconductor processing 2020-11, Vol.118, p.105165, Article 105165
• Main Authors: Deka, Nitumoni, Chakraborty, Pinak, Chandra Patra, Dulal, Dhar, Saurab, Mondal, Suvra Prakash
• Format: Article
• Language: English
• Subjects: External quantum efficiency (EQE); PbS nanoparticles; Reduced graphene oxide (RGO); Responsivity [formula omitted]and detectivity ([formula omitted]); Self-powered photodetector; ZnO nanorods
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2020.105165

Vertically aligned ZnO nanorods (NRs) were grown on fluorine doped tin oxide (FTO) coated glass substrates using hydrothermal method. Self-powered broadband photodetector was fabricated with PbS decorated ZnO NRs and reduced graphene oxide (RGO) junction. ZnO NRs/PbS/RGO device demonstrated significant photocurrent over broad spectral range 350–700 nm. Our photodetector showed maximum external quantum efficiency (EQE) ~78%, responsivity Rλ ~0.25A/W and detectivity (Dλ ) ~82944.55Hz1/2/W at 400 nm under zero bias. The transient photoresponse of the device exhibited fast response (~65 ms) and recovery time (~74 ms). Such PbS/ZnO NRs p-n heterojunction also demonstrated photovoltaic properties with open circuit voltage (VOC) ~ 0.27 V, short circuit current (JSC) ~1.03 mA/cm2 and power conversion efficiency (PEC) ~0.73% under illumination of white light of intensity 100 mW/cm2. •Self-powered photodetector was fabricated using PbS decorated ZnO nanorods.•Photo-reduced Graphene Oxide (RGO) was used as top electrode.•Photodetector demonstrated high EQE, detectivity and responsivity.•The fabricated device showed good photovoltaic performances.