Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

• Published in: Materials science in semiconductor processing 2021-06, Vol.127, p.105733, Article 105733
• Main Authors: Altuntas, Ismail, Kocak, Merve Nur, Yolcu, Gamze, Budak, Hasan Feyzi, Kasapoğlu, A. Emre, Horoz, Sabit, Gür, Emre, Demir, Ilkay
• Format: Article
• Language: English
• Subjects: AlN; Diffusion; MOVPE; PALE
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2021.105733

In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were investigated by secondary ion mass spectroscopy (SIMS). It was observed that O and Si concentration change with growth temperature of epilayers as well as the interface significantly. HRXRD (high-resolution x-ray diffraction) analyses showed that the highest growth temperature results with the lowest full width at half maximum (FWHM) value for both ɷ scans. Scanning electron microscope (SEM) and atomic force microscopy (AFM) analyses indicated that relatively low growth temperature grown samples gave rise to 2D-like growth mode with openings while increased growth temperature resulted in change the growth mode to a columnar mode with increasing V-shape pits because of the increasing diffusion coefficient of O impurities and Si atoms in AlN epilayers.