Influence of diamond wire saw slicing parameters on (010) lattice plane beta-gallium oxide single crystal wafer

• Published in: Materials science in semiconductor processing 2021-10, Vol.133, p.105939, Article 105939
• Main Authors: Gao, Pengcheng, Tan, Baimei, Yang, Fan, Li, Hui, Bian, Na, Sun, Xiaoqin, Liu, Mengrui, Wang, Ru
• Format: Article
• Language: English
• Subjects: Diamond wire saw; plane β-Ga2O3; Subsurface damage layer depth; Wafer surface morphology
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2021.105939

In this paper, the effect of the process parameters of reciprocating diamond wire saw on the surface quality of the (010) lattice plane β-Ga2O3 single crystal was investigated. According to the theory of the indentation fracture mechanics, a numerical model for the effect of slicing process parameters on the depth of subsurface damage layer of β-Ga2O3 wafer was established, and verified by the slicing experiments of β-Ga2O3 single crystal. The results show that the numerical model can provide reference for strongly anisotropic β-Ga2O3 wafers slicing along different lattice planes. In addition, SEM and SJ-210 roughness measuring instrument were employed to explore the effect of process parameters on the quality of wafer surface after wire saw cutting. According to the theoretical calculation and experimental results, the depth of subsurface damage layer can be reduced and the surface quality of the wafer can be effectively improved by increasing the wire speed or decreasing the feed rate.