Controlled nucleation time for improving aluminum nitride growth

In this work, aluminum nitride (AlN) nucleation was varied at 30, 60 and 120 s as an attempt to reduce the surface roughness and the dislocation density of the overgrown AlN layer. By increasing the nucleation time up to 60 s, the surface became smoother and the dislocation density decreased. With 6...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2021-10, Vol.133, p.105968, Article 105968
Main Authors: Samsudin, M.E.A., Yusuf, Y., Ahmad, M.A., Zainal, N.
Format: Article
Language:English
Subjects:
3D growth
AlN layer
Dislocation density
Epitaxy
Metal-organics chemical vapor deposition (MOCVD)
Surface roughness
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Summary:In this work, aluminum nitride (AlN) nucleation was varied at 30, 60 and 120 s as an attempt to reduce the surface roughness and the dislocation density of the overgrown AlN layer. By increasing the nucleation time up to 60 s, the surface became smoother and the dislocation density decreased. With 60 s of nucleation, the dislocation density can be as low as 8.63 × 108 cm -2. Under this condition, the formation of 3D growth improved. This, in turn, favored more dislocation inclination in the AlN layer. However, the 3D growth disappeared by prolonged nucleation for 120 s. As a result, no further improvement of the AlN layer was observed. •A successful AlN layer with smooth surface and low dislocations density by MOCVD.•The optimum nucleation time is desirable in reducing dislocations density.•Proper controlled in nucleation resulted in better formation of 3D growth.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2021.105968