InAs triangular quantum wells grown on InP/SiO2/Si heterogeneous substrate for mid-infrared emission

The properties of InAs/In0.53Ga0.37As triangular quantum wells (QWs) grown on an InP/SiO2/Si integrated substrate by ion-slicing technology are investigated. The material structure and growth quality are characterized by the X-ray diffraction (XRD) and transmission electron microscope measurements....

Full description

Saved in:
Bibliographic Details
Published in:Materials science in semiconductor processing 2021-12, Vol.136, p.106163, Article 106163
Main Authors: Jiao, Zhejing, Huang, Weiguo, Liu, Bowen, Lin, Jiajie, You, Tiangui, Wang, Shumin, Gong, Qian, Gu, Yi, Ou, Xin, Li, Xue
Format: Article
Language:English
Subjects:
InAs triangular quantum wells
InP substrate
Mid-infrared emission
Si substrate
Wafer bonding
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The properties of InAs/In0.53Ga0.37As triangular quantum wells (QWs) grown on an InP/SiO2/Si integrated substrate by ion-slicing technology are investigated. The material structure and growth quality are characterized by the X-ray diffraction (XRD) and transmission electron microscope measurements. The photoluminescence (PL) spectra at various temperatures are also analyzed. The PL peak wavelengths red-shift from 1.94 to 2.13 μm with the increase of temperature from 12.4 to 300 K. The experimental results of the QWs on InP/SiO2/Si substrate are found to be comparable with the performance of the same QWs grown on an InP substrate. The results are promising for future integration of Si with InP-based optical devices for the applications of light emission in mid-infrared wavelength range.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2021.106163