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Quantum well intermixing of tensile strain GaInP quantum well structures induced by ion implantation and thermal annealing

In this study, it is proposed to implanted nitrogen ions into the high Ga component tensile strain GaInP/AlGaInP quantum well material, resulting in the mixing of quantum well, so as to realize blue-shift of the emission wavelength in the active region. When the annealing temperature is 730 °C, the...

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Published in:Materials science in semiconductor processing 2022-02, Vol.138, p.106306, Article 106306
Main Authors: Lin, Tao, Li, Ya-ning, Xie, Jia-nan, Ma, Ze-kun, Zhao, Rong-jin, Duan, Yu-peng
Format: Article
Language:English
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Summary:In this study, it is proposed to implanted nitrogen ions into the high Ga component tensile strain GaInP/AlGaInP quantum well material, resulting in the mixing of quantum well, so as to realize blue-shift of the emission wavelength in the active region. When the annealing temperature is 730 °C, the emission wavelength decreases with the increase of the annealing time. The test results show that the blue-shift is mainly related to ion implantation combined with rapid thermal annealing, and the introduced impurities have an adverse effect on the surface roughness and crystal quality of the material. •First study of N ion implantation tensile strain GaInP/AlGaInP quantum well material induces quantum well intermixing.•It was found that the surface roughness of the material changed after ion implantation.•Impurity defects are the main cause of quantum well intermixing, and rapid thermal annealing has little effect.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2021.106306