Enhanced luminescence of erbium doped Ga2O3 films and devices by optimizing annealing process

• Published in: Materials science in semiconductor processing 2024-03, Vol.171, p.108029, Article 108029
• Main Authors: Pang, Houwei, Fan, Yuxuan, Wang, Yuan, Wu, Yunfeng, Li, Dongsheng, Yang, Deren
• Format: Article
• Language: English
• Subjects: Annealing; Electroluminescence; Erbium doped Ga2O3; Photoluminescence; Silicon-based optoelectronics
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2023.108029

Silicon based erbium doped Ga2O3 films and devices are fabricated. It is found that the intensity of Er3+ ions emission can be enhanced by optimizing the content of sensitizer as well as increasing the optical activity of Er3+ ions in the way of adjusting the annealing process. The indirectly excited luminescence of Er3+ ions can be improved, as measured by photoluminescence and electroluminescence, via selecting N2 as the ambient, decreasing the annealing temperature or prolonging the thermal treatment time. Herein, light emitting devices present the maximum optical power density of ∼0.84 μW/cm2. This work proposes a way to optimize the indirect emission by regulating the content of sensitizers and the optical activity of Er3+ ions, beneficial to the practical use of electrically-driven silicon-based light sources. •Er doped Ga2O3 heterojunction luminous films and devices are fabricated.•Emission intensity is linked with oxygen vacancies and the optical activity of Er3+.•Oxygen vacancies can be maintained by annealing heterostructures in nitrogen.•Optical activity of Er3+ can be enhanced by reducing the annealing temperature.•The heterostructure devices present the lowest working voltage of 10 V.