Enhancement of room temperature electroluminescence from strained SiGe/Ge(111) multiple quantum wells light emitting diodes

Epitaxially grown Ge-on-Si(111) based vertical type light-emitting diodes (LEDs) including a single strained SiGe layer or strained SiGe/Ge multiple quantum wells (MQWs) as intrinsic active layers are fabricated and their electroluminescence (EL) properties are compared. It is found from their diode...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2024-06, Vol.176, p.108299, Article 108299
Main Authors: Kikuoka, Shuya, Kanesawa, Rena, Yamada, Michihiro, Hamaya, Kohei, Sawano, Kentarou
Format: Article
Language:English
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Summary:Epitaxially grown Ge-on-Si(111) based vertical type light-emitting diodes (LEDs) including a single strained SiGe layer or strained SiGe/Ge multiple quantum wells (MQWs) as intrinsic active layers are fabricated and their electroluminescence (EL) properties are compared. It is found from their diode characteristics that off-leakage currents are highly suppressed by the strained SiGe insertion, and resultantly, markedly enhanced room-temperature EL emission is obtained for the SiGe/Ge MQWs LED compared to LED with only Ge active layer, indicating that the strained SiGe/Ge heterostructures are promising toward high efficiency light source in the Si photonics.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2024.108299