Improvement of switching uniformity in TiO2-based resistive random access memory with graphene oxide embedded film

TiO2-based resistive random access memory (RRAM) devices has the potential to fabricating nonvolatile memory applications. However, the memories based on TiO2 have severe problems like large resistive switching parameter fluctuations, poor cycling endurance and so on, which can be a limitation of th...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2024-11, Vol.182, p.108688, Article 108688
Main Authors: Jia, Weijie, Hu, Lifang, Gao, Wei, Mu, Wenjin, Chou, Zhao, Cheng, Xiao
Format: Article
Language:English
Subjects:
Conductive filament
Graphene oxide
RRAM
SCLC
TiO2
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Summary:TiO2-based resistive random access memory (RRAM) devices has the potential to fabricating nonvolatile memory applications. However, the memories based on TiO2 have severe problems like large resistive switching parameter fluctuations, poor cycling endurance and so on, which can be a limitation of the device in practical applications. Graphene oxide (GO) is a novel material that has attracted much attention and is often applied to enhance the performance of memories due to its own special properties. In this work, two types of bilayer structure based on TiO2 for RRAM devices were fabricated. The significant improvement in uniformity of operating voltages and high HRS/LRS ratio of the TiO2-based RRAM were realized by inserting a two-dimensional GO film between TiO2 and FTO. The presence of the GO film would prevent the ion exchange between the electrodes and the switching layer as well as its insulating properties. The conduction mechanisms of all the devices in low and high resistance states were dominant by the Ohmic conduction mechanism and the space charge limited conduction mechanism, respectively. This research manifests the promising potential of two-dimensional GO embedded layer for improving resistive switching performance of RRAMs. •Well and uniform TiO2 and graphene oxide films were fabricated.•The bipolar resistive switching behavior was studied.•Improved performance of the TiO2-based RRAM by inserting graphene oxide film.•The mechanism of the inserting graphene on the switching performance was studied.•Conduction mechanism is ascribed to the SCLC and the Ohmic conduction.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2024.108688