High performance Au/mix-phase MgZnO/Ga-doped ZnO/In heterojunction solar-blind UV detector with small work voltage

• Published in: Materials science in semiconductor processing 2025-01, Vol.185, p.108990, Article 108990
• Main Authors: Zhong, Wentao, Han, Shun, Yue, Dewu, Cao, Peijiang, Liu, Wenjun, Zeng, Yuxiang, Fang, Ming, Zhu, Deliang
• Format: Article
• Language: English
• Subjects: Heterostructure; Mix-phase MgZnO; Solar-blind UV detector; UV response
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2024.108990

High performance UVC (220 nm–280 nm) detectors with low work voltage is key problem in wide application of UVC optoelectronic device. Here, Au/MgZnO/Ga-doped ZnO/In heterojunction detector is made with both high UVC sensitivity mix-phase MgZnO and high carrier density Ga-doped ZnO conductive layers. The heterostructure detector possess relative high response(0.36A/W)at 254 nm deep UV light without bias voltage. The avalanche breakdown phenomenon within the heterojunction detector, introduced high deep UV response (1390.3 A/W at 3.3 μW/cm2 230 nm) of the Au/MgZnO/Ga-doped ZnO/In heterojunction detector under 5 V bias voltage. The high response of Au/MgZnO/Ga-doped ZnO/In heterojunction detector under low work voltage, is not only much higher than MSM structure MgZnO detector under bias voltage over 25 V, but also higher than reported deep UV detector under small bias voltage. In addition, because of different internal breakdown mechanism, the peak response position of the Au/MgZnO/Ga-doped ZnO/In heterojunction detector is located at shorter wavelength position compared with MSM structure MgZnO detector. Therefore, Au/MgZnO/Ga-doped ZnO/In heterojunction detector is an ideal device structure in low voltage driven detector with relative high response at short wavelength UV light. [Display omitted] •An Au/mix-phase MgZnO/Ga-doped ZnO/In heterojunction detector is made with UV sensitive mix-phase MgZnO layer.•The heterojunction detector could response at 254 nm deep UV light without bias voltage.•The Au/MgZnO/Ga-doped ZnO/In heterojunction detector possess high response (1390.3 A/W at 3.3 mW/cm2 230 nm) at 5 V bias voltage.•The avalanche breakdown caused the high performance of the heterojunction detector under small voltage.•The UV response of Au/MgZnO/Ga-doped ZnO/In detector with low work voltage, is much higher than MSM structure MgZnO detector under high bias voltage.