Impact of Ar plasma bombardment on the composition and surface roughness of GaAs wafer

The surface property of GaAs has an important impact on device performance, so how to improve the surface quality in reactive ion etching process is one of the key issues. In this paper, the composition and roughness changes of GaAs surface subjected to Ar plasma bombardment were investigated. It wa...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2025-01, Vol.185, p.109013, Article 109013
Main Authors: Liu, Qing, Li, Ye, Ji, Chunxue, Chen, Xiaoling, Bao, Yidi, Liu, Wen, Yang, Fuhua, Wang, Xiaodong
Format: Article
Language:English
Subjects:
Ar plasma bombardment
GaAs
Native oxide layer
Surface composition
Surface roughness
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Summary:The surface property of GaAs has an important impact on device performance, so how to improve the surface quality in reactive ion etching process is one of the key issues. In this paper, the composition and roughness changes of GaAs surface subjected to Ar plasma bombardment were investigated. It was found that the relative contents of Ga2O3 and As2O3 of the surface decreased with the increase of RF power, and the distribution depths of the compositions were different. In addition, dielectric constant increased with the increase of RF power. It was found that the surface roughness can be reduced after the plasma bombardment. Furthermore, the surface roughness and Ga/As component ratio followed a certain trend with the RF power. When the RF power was lower than 150 W, the surface roughness and Ga/As component ratio had the same trend, and when the RF power was higher than 150 W, they had the opposite trend. These results are helpful for the improvement of GaAs-based wafer-bonding strength and the performance of optoelectronic structures.
ISSN:1369-8001
DOI:10.1016/j.mssp.2024.109013