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Effect of Alkyl Substituents on the Electrical Properties of Thieno[2,3-b]thiophene Derivatives in Solution-Processed Organic Thin-Film Transistor Applications

Three solution-processable small-molecule thieno[2,3-b]thiophene (2,3-bTT) derivatives—2,5-bis(5-(2-ethylhexyl)thiophen-2-yl)thieno[2,3-b]thiophene (compound 1), 2,5-bis(5-octylthiophen-2-yl)thieno[2,3-b]thiophene (compound 2), and 3,4-dimethyl-2,5-bis(5-octylthiophen-2-yl)thieno[2,3-b]thiophene (co...

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Published in:Materials science in semiconductor processing 2025-03, Vol.188, p.109250, Article 109250
Main Authors: Kim, Jinyeob, Kang, Hyowon, Kim, Choongik, Seo, SungYong
Format: Article
Language:English
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Summary:Three solution-processable small-molecule thieno[2,3-b]thiophene (2,3-bTT) derivatives—2,5-bis(5-(2-ethylhexyl)thiophen-2-yl)thieno[2,3-b]thiophene (compound 1), 2,5-bis(5-octylthiophen-2-yl)thieno[2,3-b]thiophene (compound 2), and 3,4-dimethyl-2,5-bis(5-octylthiophen-2-yl)thieno[2,3-b]thiophene (compound 3)—were synthesized with a focus on the effect of alkyl chain structure (linear vs. branched) and backbone modifications on the electrical properties of the 2,3-bTT derivatives. Their thermal and optical properties were examined for potential application in the channel layer of organic thin-film transistors (OTFTs). Atomic force microscopy (AFM) and X-ray diffraction (XRD) were employed to investigate the surface characteristics and microstructural features of each compound. Thin films based on the 2,3-bTT compounds were incorporated as a channel layer of top-contact/bottom-gate OTFTs. The compounds exhibited p-channel characteristics, with compound 2, featuring linear alkyl chains and an unmodified 2,3-bTT backbone, resulting in minimal steric hindrance and enhanced molecular packing efficiency, demonstrated the highest electrical performance, exhibiting a hole mobility of up to 0.03 cm2/V·s and a current on/off ratio exceeding 106. Thieno[2,3-b]thiophene (2,3-bTT) based organic semiconductors were utilized as an active layer in organic field-effect transistors (OFETs). The fabricated devices exhibited hole mobility up to 0.03 cm2/V·s. [Display omitted]
ISSN:1369-8001
DOI:10.1016/j.mssp.2024.109250