A review on device architecture engineering on various 2-D materials toward high-performance photodetectors

• Published in: Materials today communications 2023-03, Vol.34, p.105094, Article 105094
• Main Authors: Mondal, Anibrata, Yadav, P.V. Karthik, Ashok Kumar Reddy, Y.
• Format: Article
• Language: English
• Subjects: 2-D material; Device architecture; Figures of merit; Photo current; Photodetector
• ISSN: 2352-4928; 2352-4928
• DOI: 10.1016/j.mtcomm.2022.105094

The recent decade of sensor technology has witnessed tremendous achievement in the development of photodetectors. To fabricate the photodetectors, two-dimensional (2-D) materials of graphene derivatives, black phosphorous, and transition metal dichalcogenides have attracted enormous attention as photoactive materials due to their high mobility, atomic scale thickness, and high surface-area to volume ratio. Despite of several reviews on 2-D material-based photodetectors, the comparative study through the various architectures of the photodetectors is not reviewed. Since the performance and application of the photodetector are highly dependent on the device architecture. In this study, various architectures including avalanche, p-n junction, Schottky, and metal-semiconductor-metal photodetectors based on above-mentioned materials are discussed. Herein, we focus particularly on the root of the photocurrent generation, which significantly enhances the performance of various photodetectors. Furthermore, the performances of the photodetector in terms of responsivity, detectivity, and response time are reviewed through the correlation of various materials. Finally, the overall comparison of the discussed photodetectors with various structures is studied concerning their figures of merit. Among the reported photodetectors, WSe2-graphene-MoS2 heterostructure is achieved the highest responsivity of 104 A/W under low bias voltage (∼1 V) and it can be suitable for self-powered photodetectors. Moreover, the MoS2-based metal-semiconductor-metal photodetector shows a rapid response time of 60 ns and it is most appropriate for fast electronic devices. In addition, this review reveals the challenges and future aspects of the advancement and enhancement in the application of photodetectors for ultrafast optoelectronic devices. [Display omitted] •Symmetrically discussed the advancement in the photodetector structures with mechanisms.•MoS2-based photoactive material exhibits superior photodetector properties.•High performance of photodetector results compared with different material and device architectures.•Elaborated the development scope towards the application of fast optoelectronic devices.