The discovery of the effect of compositional disorder on the opto-electronic properties of the deformed InGaAsP quaternary

• Published in: Materials today communications 2023-06, Vol.35, p.105678, Article 105678
• Main Authors: Tarbi, Amal, Chtouki, T., Sellam, M.A., Benahmed, A., El kouari, Y., Erguig, H., Migalska-Zalas, A., Goncharova, I., Taboukhat, S.
• Format: Article
• Language: English
• Subjects: Composite materials; Compositional disorder; InGaAsP; Optical properties; Optoelectronics
• ISSN: 2352-4928; 2352-4928
• DOI: 10.1016/j.mtcomm.2023.105678

This article presents a theoretical study of the optoelectronic properties of InGaAsP alloys fabricated on three different substrates: InP, GaA, and ZnSe. Particular attention has been paid to the study of bandgap energy along points of high symmetry in the Brillouin zone, absorption coefficient, and refractive index of materials without compositional disorder and subjected to deformation. Our goal is to expand the range of optoelectronic properties. We found that the absorption coefficient of the deformed InGaAsP/InP material in the absence of disorder varies between 9.66×104cm−1 and 1.35×105cm−1 changing the content of phosphorus and gallium, making it possible to provide a wide range of refractive indices [3.06, 3.84] compared to GaAs substrates [2.67, 3.02] and ZnSe [2.69, 3.05]. This refractive index contrast can be exploited in the design of optical waveguides. [Display omitted] •Optoelectronic properties of the InGaAsP quaternary system.•Effects of disorderlessness on optoelectronic properties for different substrates InP, GaAs and ZnSe.•Effects of deformation due to lattice mismatch on optoelectronic properties.•Broadening of the ranges of optoelectronic properties of the quaternary InGaAsP.