The impact of nickel doping on metal-oxide network in solution-processed indium zinc oxide transistors

• Published in: Materials today communications 2023-06, Vol.35, p.106221, Article 106221
• Main Authors: Kim, In Ho, Kim, Se Jin, Kim, Sung-Jin, An, Tae Kyu, Jeong, Yong Jin
• Format: Article
• Language: English
• Subjects: Carrier suppressor; IZO; Ni doping; Oxide thin-film transistor; Solution process
• ISSN: 2352-4928; 2352-4928
• DOI: 10.1016/j.mtcomm.2023.106221

Solution-processed nickel zinc oxide (IZO) thin-film transistors (TFTs) are of great interest as core elements for future display technology based on the low-cost manufacture. It still remains a challenge to ensure stability in the off-current state of IZO using a dopant that is more resource-friendly than Ga in solution processing. In this study, we suggest a solution-based doping process of the IZO semiconductors with a Ni carrier suppressor and investigated the effects of Ni on their transistor operation. Owing to similar size of Ni2+ to Zn2+, an appropriate concentration of Ni partially substituted Zn sites and the strong bonding force of Ni with O reduces hydroxide groups on the surface bonded to Zn, whereas excess Ni addition rather inhibited the formation of smooth thin film. The resulting Ni-doped IZO TFT devices from an optimized Ni concentration exhibited higher performances with significantly reduced off-state currents while maintaining high on-state currents, compared to IZO TFTs. This approach enriches the current family of solution-processed metal oxide semiconductors by providing another option for resource-friendly carrier suppressor, which can contribute to the inexpensive and simple solution process for fabricating TFTs. [Display omitted]