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A study on defect, doping, and performance of ETLs (ZnO, TiO2, and IGZO) for the lead-free CsSnCl3 perovskite solar cell by SCAPS-1D framework

The potential of lead-free perovskite materials using cesium as an organic cation has been explored as a replacement for lead-based perovskite absorbers to minimize toxicity. These materials exhibit high stability, a tunable bandgap, and superior optoelectronic properties compared to lead-based mate...

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Published in:Materials today communications 2024-03, Vol.38, p.107575, Article 107575
Main Authors: Sani, Shuaibu, Usman, Abdullahi, Bhatranand, Apichai, Jiraraksopakun, Yuttapong, Muhammad, Khalid Sabo, Yahaya, Usman
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container_end_page
container_issue
container_start_page 107575
container_title Materials today communications
container_volume 38
creator Sani, Shuaibu
Usman, Abdullahi
Bhatranand, Apichai
Jiraraksopakun, Yuttapong
Muhammad, Khalid Sabo
Yahaya, Usman
description The potential of lead-free perovskite materials using cesium as an organic cation has been explored as a replacement for lead-based perovskite absorbers to minimize toxicity. These materials exhibit high stability, a tunable bandgap, and superior optoelectronic properties compared to lead-based materials. Extensive studies have investigated Sn-based cesium tin chloride (CsSnCl3) in the literature, focusing on multiple hole transporting layers (HTLs) and electron transporting layers (ETLs). A numerical study has been conducted to study the effects of thickness, series, and shunt resistance, as well as favorable band alignment with the absorber, HTL, and ETL layers. According to the literature, ETLs such as TiO2, ZnO, and IGZO, in combination with CBTS as the HTL, have emerged as the most promising candidates for achieving optimal fabrication of CsSbCl3 devices. However, several investigations have yet to be covered in the reports. These include analyzing the effects of absorber and interface defects on the ETLs/HTLs layers, determining the optimal metal back contact electrode, and optimizing the doping concentration of the absorber or ETLs/HTLs to achieve device optimization and the desired operating temperature. Through the optimization process, the study identified the optimum numerical values necessary to achieve higher device performance. It specifically found that ZnO performs the best as an ETL candidate, and the configuration combination of ITO/ZnO/(CsSnCI3)/CBTS/Se emerged as the most favorable compared to the values reported in the literature. [Display omitted]
doi_str_mv 10.1016/j.mtcomm.2023.107575
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fullrecord <record><control><sourceid>elsevier_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1016_j_mtcomm_2023_107575</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S2352492823022663</els_id><sourcerecordid>S2352492823022663</sourcerecordid><originalsourceid>FETCH-LOGICAL-c306t-519f47809193ac3e329f23770c61a00efbe47558a1f601c31d5d63264e242fee3</originalsourceid><addsrcrecordid>eNp9kE1Lw0AQhoMoWGr_gYc5KjR1P_LRXIQSay0UKrReelm2u7OaNsmW3Vjpn_A3mxIPnjzNMLzvw_AEwS0lI0po8rAbVY2yVTVihPH2lMZpfBH0GI9ZGGVsfPlnvw4G3u8IIXQckyiLesH3BHzzqU9ga9BoUDVD0PZQ1O9DkLWGAzpjXSVrhWANTNcLD3ebejmEdbFkXWY-2yzvoY1B84FQotShcYiQ-1Wdl_zMsEe_LxoEb0vpQGFZwvYEq3zyugrpExgnK_yybn8TXBlZehz8zn7w9jxd5y_hYjmb55NFqDhJmjCmmYnSMcloxqXiyFlmGE9TohIqCUGzxSiN47GkJiFUcapjnXCWRMgiZhB5P4g6rnLWe4dGHFxRSXcSlIizVrETnVZx1io6rW3tsath-9uxQCe8KrB1owvXqhPaFv8DfgCukX_W</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A study on defect, doping, and performance of ETLs (ZnO, TiO2, and IGZO) for the lead-free CsSnCl3 perovskite solar cell by SCAPS-1D framework</title><source>ScienceDirect Journals</source><creator>Sani, Shuaibu ; Usman, Abdullahi ; Bhatranand, Apichai ; Jiraraksopakun, Yuttapong ; Muhammad, Khalid Sabo ; Yahaya, Usman</creator><creatorcontrib>Sani, Shuaibu ; Usman, Abdullahi ; Bhatranand, Apichai ; Jiraraksopakun, Yuttapong ; Muhammad, Khalid Sabo ; Yahaya, Usman</creatorcontrib><description>The potential of lead-free perovskite materials using cesium as an organic cation has been explored as a replacement for lead-based perovskite absorbers to minimize toxicity. These materials exhibit high stability, a tunable bandgap, and superior optoelectronic properties compared to lead-based materials. Extensive studies have investigated Sn-based cesium tin chloride (CsSnCl3) in the literature, focusing on multiple hole transporting layers (HTLs) and electron transporting layers (ETLs). A numerical study has been conducted to study the effects of thickness, series, and shunt resistance, as well as favorable band alignment with the absorber, HTL, and ETL layers. According to the literature, ETLs such as TiO2, ZnO, and IGZO, in combination with CBTS as the HTL, have emerged as the most promising candidates for achieving optimal fabrication of CsSbCl3 devices. However, several investigations have yet to be covered in the reports. These include analyzing the effects of absorber and interface defects on the ETLs/HTLs layers, determining the optimal metal back contact electrode, and optimizing the doping concentration of the absorber or ETLs/HTLs to achieve device optimization and the desired operating temperature. Through the optimization process, the study identified the optimum numerical values necessary to achieve higher device performance. It specifically found that ZnO performs the best as an ETL candidate, and the configuration combination of ITO/ZnO/(CsSnCI3)/CBTS/Se emerged as the most favorable compared to the values reported in the literature. [Display omitted]</description><identifier>ISSN: 2352-4928</identifier><identifier>EISSN: 2352-4928</identifier><identifier>DOI: 10.1016/j.mtcomm.2023.107575</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>CsSnCl3 perovskite ; Defect density ; Doping concentration ; Metal back contact ; Optimization ; SCAPS</subject><ispartof>Materials today communications, 2024-03, Vol.38, p.107575, Article 107575</ispartof><rights>2023 Elsevier Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c306t-519f47809193ac3e329f23770c61a00efbe47558a1f601c31d5d63264e242fee3</citedby><cites>FETCH-LOGICAL-c306t-519f47809193ac3e329f23770c61a00efbe47558a1f601c31d5d63264e242fee3</cites><orcidid>0000-0003-0143-978X ; 0000-0002-6736-6133 ; 0000-0002-3468-918X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Sani, Shuaibu</creatorcontrib><creatorcontrib>Usman, Abdullahi</creatorcontrib><creatorcontrib>Bhatranand, Apichai</creatorcontrib><creatorcontrib>Jiraraksopakun, Yuttapong</creatorcontrib><creatorcontrib>Muhammad, Khalid Sabo</creatorcontrib><creatorcontrib>Yahaya, Usman</creatorcontrib><title>A study on defect, doping, and performance of ETLs (ZnO, TiO2, and IGZO) for the lead-free CsSnCl3 perovskite solar cell by SCAPS-1D framework</title><title>Materials today communications</title><description>The potential of lead-free perovskite materials using cesium as an organic cation has been explored as a replacement for lead-based perovskite absorbers to minimize toxicity. These materials exhibit high stability, a tunable bandgap, and superior optoelectronic properties compared to lead-based materials. Extensive studies have investigated Sn-based cesium tin chloride (CsSnCl3) in the literature, focusing on multiple hole transporting layers (HTLs) and electron transporting layers (ETLs). A numerical study has been conducted to study the effects of thickness, series, and shunt resistance, as well as favorable band alignment with the absorber, HTL, and ETL layers. According to the literature, ETLs such as TiO2, ZnO, and IGZO, in combination with CBTS as the HTL, have emerged as the most promising candidates for achieving optimal fabrication of CsSbCl3 devices. However, several investigations have yet to be covered in the reports. These include analyzing the effects of absorber and interface defects on the ETLs/HTLs layers, determining the optimal metal back contact electrode, and optimizing the doping concentration of the absorber or ETLs/HTLs to achieve device optimization and the desired operating temperature. Through the optimization process, the study identified the optimum numerical values necessary to achieve higher device performance. It specifically found that ZnO performs the best as an ETL candidate, and the configuration combination of ITO/ZnO/(CsSnCI3)/CBTS/Se emerged as the most favorable compared to the values reported in the literature. [Display omitted]</description><subject>CsSnCl3 perovskite</subject><subject>Defect density</subject><subject>Doping concentration</subject><subject>Metal back contact</subject><subject>Optimization</subject><subject>SCAPS</subject><issn>2352-4928</issn><issn>2352-4928</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kE1Lw0AQhoMoWGr_gYc5KjR1P_LRXIQSay0UKrReelm2u7OaNsmW3Vjpn_A3mxIPnjzNMLzvw_AEwS0lI0po8rAbVY2yVTVihPH2lMZpfBH0GI9ZGGVsfPlnvw4G3u8IIXQckyiLesH3BHzzqU9ga9BoUDVD0PZQ1O9DkLWGAzpjXSVrhWANTNcLD3ebejmEdbFkXWY-2yzvoY1B84FQotShcYiQ-1Wdl_zMsEe_LxoEb0vpQGFZwvYEq3zyugrpExgnK_yybn8TXBlZehz8zn7w9jxd5y_hYjmb55NFqDhJmjCmmYnSMcloxqXiyFlmGE9TohIqCUGzxSiN47GkJiFUcapjnXCWRMgiZhB5P4g6rnLWe4dGHFxRSXcSlIizVrETnVZx1io6rW3tsath-9uxQCe8KrB1owvXqhPaFv8DfgCukX_W</recordid><startdate>202403</startdate><enddate>202403</enddate><creator>Sani, Shuaibu</creator><creator>Usman, Abdullahi</creator><creator>Bhatranand, Apichai</creator><creator>Jiraraksopakun, Yuttapong</creator><creator>Muhammad, Khalid Sabo</creator><creator>Yahaya, Usman</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-0143-978X</orcidid><orcidid>https://orcid.org/0000-0002-6736-6133</orcidid><orcidid>https://orcid.org/0000-0002-3468-918X</orcidid></search><sort><creationdate>202403</creationdate><title>A study on defect, doping, and performance of ETLs (ZnO, TiO2, and IGZO) for the lead-free CsSnCl3 perovskite solar cell by SCAPS-1D framework</title><author>Sani, Shuaibu ; Usman, Abdullahi ; Bhatranand, Apichai ; Jiraraksopakun, Yuttapong ; Muhammad, Khalid Sabo ; Yahaya, Usman</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c306t-519f47809193ac3e329f23770c61a00efbe47558a1f601c31d5d63264e242fee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>CsSnCl3 perovskite</topic><topic>Defect density</topic><topic>Doping concentration</topic><topic>Metal back contact</topic><topic>Optimization</topic><topic>SCAPS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sani, Shuaibu</creatorcontrib><creatorcontrib>Usman, Abdullahi</creatorcontrib><creatorcontrib>Bhatranand, Apichai</creatorcontrib><creatorcontrib>Jiraraksopakun, Yuttapong</creatorcontrib><creatorcontrib>Muhammad, Khalid Sabo</creatorcontrib><creatorcontrib>Yahaya, Usman</creatorcontrib><collection>CrossRef</collection><jtitle>Materials today communications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sani, Shuaibu</au><au>Usman, Abdullahi</au><au>Bhatranand, Apichai</au><au>Jiraraksopakun, Yuttapong</au><au>Muhammad, Khalid Sabo</au><au>Yahaya, Usman</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A study on defect, doping, and performance of ETLs (ZnO, TiO2, and IGZO) for the lead-free CsSnCl3 perovskite solar cell by SCAPS-1D framework</atitle><jtitle>Materials today communications</jtitle><date>2024-03</date><risdate>2024</risdate><volume>38</volume><spage>107575</spage><pages>107575-</pages><artnum>107575</artnum><issn>2352-4928</issn><eissn>2352-4928</eissn><abstract>The potential of lead-free perovskite materials using cesium as an organic cation has been explored as a replacement for lead-based perovskite absorbers to minimize toxicity. These materials exhibit high stability, a tunable bandgap, and superior optoelectronic properties compared to lead-based materials. Extensive studies have investigated Sn-based cesium tin chloride (CsSnCl3) in the literature, focusing on multiple hole transporting layers (HTLs) and electron transporting layers (ETLs). A numerical study has been conducted to study the effects of thickness, series, and shunt resistance, as well as favorable band alignment with the absorber, HTL, and ETL layers. According to the literature, ETLs such as TiO2, ZnO, and IGZO, in combination with CBTS as the HTL, have emerged as the most promising candidates for achieving optimal fabrication of CsSbCl3 devices. However, several investigations have yet to be covered in the reports. These include analyzing the effects of absorber and interface defects on the ETLs/HTLs layers, determining the optimal metal back contact electrode, and optimizing the doping concentration of the absorber or ETLs/HTLs to achieve device optimization and the desired operating temperature. Through the optimization process, the study identified the optimum numerical values necessary to achieve higher device performance. It specifically found that ZnO performs the best as an ETL candidate, and the configuration combination of ITO/ZnO/(CsSnCI3)/CBTS/Se emerged as the most favorable compared to the values reported in the literature. [Display omitted]</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.mtcomm.2023.107575</doi><orcidid>https://orcid.org/0000-0003-0143-978X</orcidid><orcidid>https://orcid.org/0000-0002-6736-6133</orcidid><orcidid>https://orcid.org/0000-0002-3468-918X</orcidid></addata></record>
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subjects CsSnCl3 perovskite
Defect density
Doping concentration
Metal back contact
Optimization
SCAPS
title A study on defect, doping, and performance of ETLs (ZnO, TiO2, and IGZO) for the lead-free CsSnCl3 perovskite solar cell by SCAPS-1D framework
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T22%3A24%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-elsevier_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20study%20on%20defect,%20doping,%20and%20performance%20of%20ETLs%20(ZnO,%20TiO2,%20and%20IGZO)%20for%20the%20lead-free%20CsSnCl3%20perovskite%20solar%20cell%20by%20SCAPS-1D%20framework&rft.jtitle=Materials%20today%20communications&rft.au=Sani,%20Shuaibu&rft.date=2024-03&rft.volume=38&rft.spage=107575&rft.pages=107575-&rft.artnum=107575&rft.issn=2352-4928&rft.eissn=2352-4928&rft_id=info:doi/10.1016/j.mtcomm.2023.107575&rft_dat=%3Celsevier_cross%3ES2352492823022663%3C/elsevier_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c306t-519f47809193ac3e329f23770c61a00efbe47558a1f601c31d5d63264e242fee3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true