Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices

GaN-on-SiC has been very attractive for high-power GaN device owing to the high thermal conductivity of SiC substrate. However, the transition layer with a low-thermal-conductivity for epitaxial growth of GaN layers cause a high thermal barrier resistance at the interface between GaN and SiC. This w...

Full description

Saved in:
Bibliographic Details
Published in:Materialia 2018-11, Vol.3, p.12-14
Main Authors: Mu, Fengwen, Wang, Yinghui, He, Ran, Suga, Tadatomo
Format: Article
Language:English
Subjects:
Bonding
GaN-on-SiC
High power devices
Interface
Room temperature
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:GaN-on-SiC has been very attractive for high-power GaN device owing to the high thermal conductivity of SiC substrate. However, the transition layer with a low-thermal-conductivity for epitaxial growth of GaN layers cause a high thermal barrier resistance at the interface between GaN and SiC. This work employed surface activated bonding (SAB) method to fabricate GaN-on-SiC structure without a conventional transition layer via direct wafer bonding at room temperature. The interfaces bonded at room temperature was investigated to confirm the structure. Also, the interface annealed at 200 °C was inspected to confirm the possible changes at a working temperature. [Display omitted]
ISSN:2589-1529
2589-1529
DOI:10.1016/j.mtla.2018.09.027