Manipulation of bilayer MoS2-based MESFET with flexoelectric polarization field

We propose a bilayer MoS2-based metal-semiconductor field-effect transistor (MESFET) with the characteristic of mechanical modulation of its performance through flexoelectricity. The MESFET sample is fabricated with the bilayer MoS2 and the Si/SiO2 substrate as well as the gate electrode of Pt and t...

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Bibliographic Details
Published in:Nano energy 2024-05, Vol.123, p.109415, Article 109415
Main Authors: Wu, Junjie, Wu, Chuwei, Zhang, Weisheng, Zhang, Chunli, Chen, Weiqiu
Format: Article
Language:English
Subjects:
Bilayer MoS2
Carrier mobility
Flexoelectricity
MESFET
Schottky barrier
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Summary:We propose a bilayer MoS2-based metal-semiconductor field-effect transistor (MESFET) with the characteristic of mechanical modulation of its performance through flexoelectricity. The MESFET sample is fabricated with the bilayer MoS2 and the Si/SiO2 substrate as well as the gate electrode of Pt and the source/drain electrode of Ag/Au. The current-voltage relationships of the fabricated MESFET under the action of different gate voltages and tip forces as well as their combinations are measured with AFM. The tip force produces a strain gradient induced flexoelectric polarization field and thus changes the effective barrier height of Schottky contact. As a result, it can serve as an equivalent gate voltage, playing a significant tuning role in the performance such as transconductance and carrier mobility of the proposed MESFET. Within the drain-source voltage (VDS) range of 0–2 V, the maximum carrier mobility of the fabricated MESFET under the combined action of traditional gate voltage (VGS) and tip force reach 470 cm−2/(V∙s) significantly higher than that under VGS alone. The study provides valuable insights into the application of flexoelectricity in MESFET devices based on two-dimensional materials. [Display omitted] •A bilayer MoS2-based MESFET with the characteristic of mechanical manipulation is proposed.•The mechanism of modulating the conduction channel of the proposed MESFET with the mechanical force is revealed.•The flexoelectric polarization field can enhance the performances of the proposed MESFET.•The mechanical force can replace the traditional gate voltage in manipulating the MESFET through flexoelectricity.
ISSN:2211-2855
DOI:10.1016/j.nanoen.2024.109415